Fig. 4: Antiferroelectric transition induced by the maximum limit of intercalated buffer domain wall.
From: Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite
a Lateral PFM images of bismuth tellurite with antiferroelectricity. Upper left inset is the corresponding topography image. b Atomically resolved HAADF-STEM image of the AFE phase along c axis. Yellow arrows denote the Bi3+ displacement vectors for each site. The purple and orange circles denote Bi3+ and Te4+ atoms, respectively. Each row is labelled as A and B accordingly. The intercalated buffered B-row is labelled in red and denoted by white dotted lines. Lower right inset: Simulated STEM annular dark field image of bismuth tellurite with antiferroelectricity. c Extracted Bi3+ displacements color map of b. d Extracted DBi and θ in b. The error bars correspond to the standard deviation of DBi and θ. e DFT calculated structure of the AFE phase. The buffered B-rows are labelled with black dotted lines.
