Fig. 5: Gate-gate maps showing positively sloped resonance conductance lines resulting from hybridization in many-body states in the multi-island limit (Array #3).
a The measured charge stability diagram at a bias window of +10 mV. Conductance resonance lines with positive slopes are marked by black errors. b Histogram of the positive slopes of conductance resonance lines extracted using edge-detection on the measured charge stability diagrams of the third array over a range of bias voltages from Vbias = −10 meV to +10 mV. The y-axis of the histogram is in arbitrary units of length of the extracted positive-slope conductance line segments. c Bias evolution of the resonant conductance at the avoided crossings that are highlighted by the red box in (a). d Close-up of a region containing a few avoided crossings as highlighted by the red box in (a). The solid arrow indicates a resonant conductance line. The dashed lines mark the slopes of the charge addition conductance lines that come across near the resonant transitions. The dashed arrow marks the gate detuning \(\varepsilon\) axis perpendicular to the resonant conductance line. e Overlaid resonant conductance profiles along the gate detuning axis that are measured at different biases. Each curve is fitted using Eq. 2 in the main text; and the best-fit parameters are averaged to reconstruct the dotted curves.
