Fig. 6: TA spectrum and EL characteristics.

a ns-TA spectrum of TPANI in iodomethane under N2 atmosphere at RT (5 × 10−4 M, λex = 355 nm, delayed time: 0.15 μs, OD: optical density). Inset: TA decay profile of TPANI at 870 nm. b Device structure and c external quantum efficiency (EQE) as a function of current density (J) for the TPANI-based optimal Device D. Inset: the EL spectrum of Device D (J = 220 mA cm−2). d Simulated photon distributions of all loss channels as a function of the electron transport layer (ETL) thickness for the TPANI-based Device D. e The fitting result of the single-logarithmic electroluminescence (EL) decay curve, and f the fitting result of the double-logarithmic EL decay profile in a time range of 10–90 μs of the TPANI-based Device D (pulse width: 500 μs, bias: 8 V).