Table 2 Summary of EL performance of the CzNI- and TPANI-based non-doped OLEDs

From: Ultra-fast triplet-triplet-annihilation-mediated high-lying reverse intersystem crossing triggered by participation of nπ*-featured excited states

Device

Emitter

Vona (V)

Lmaxb (cd/m2)

CIE(x,y)c

λEL,maxd (nm)

EQEmaxe (%)

CEmaxf (cd/A)

A

CzNI

2.2

25430

0.22, 0.49

504

0.61

1.76

B

TPANI

3.2

18690

0.44, 0.52

560

2.31

7.44

C

CzNI

3.6

2905

0.27, 0.52

510

4.06

11.70

D

TPANI

4.0

9831

0.46, 0.52

566

7.82

22.09

  1. aTurn-on voltage.
  2. bMaximum luminance.
  3. cCommission International de I’Eclairage 1931 coordinates.
  4. dEL maximum.
  5. eMaximum external quantum efficiency.
  6. fMaximum current efficiency.
Back to article page