Fig. 3: Characterizations of hybrid dielectric layers. | Nature Communications

Fig. 3: Characterizations of hybrid dielectric layers.

From: Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors

Fig. 3: Characterizations of hybrid dielectric layers.

a Gate leakage current density versus applied voltage. b Breakdown voltage. c Dielectric constant and dielectric strength as a function of ZrO2 loading ratios. Error bars represent the standard deviation from 10 devices. d AFM topography images and rms roughness values: 0.407, 0.312, and 0.278 nm for Hyb_0, Hyb_1, and Hyb_2, respectively. Error bars represent the standard deviation from 10 devices.

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