Fig. 4: Current–voltage characteristics of In2O3/ZnO heterojunction TFTs. | Nature Communications

Fig. 4: Current–voltage characteristics of In2O3/ZnO heterojunction TFTs.

From: Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors

Fig. 4: Current–voltage characteristics of In2O3/ZnO heterojunction TFTs.

Representative transfer characteristics of the TFTs with a Hyb_0, b Hyb_1, and c Hyb_2 as gate dielectrics, measured at VD = 10 V. Output characteristics of the TFTs with d Hyb_0, e Hyb_1, and f Hyb_2 as gate dielectrics. The gate voltage was increasingly varied between 0 and 10 V in steps of 2.5 V.

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