Fig. 5: Operational bias-stress stability of In2O3/ZnO heterojunction TFTs with Hyb_2 as a gate dielectric. | Nature Communications

Fig. 5: Operational bias-stress stability of In2O3/ZnO heterojunction TFTs with Hyb_2 as a gate dielectric.

From: Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors

Fig. 5: Operational bias-stress stability of In2O3/ZnO heterojunction TFTs with Hyb_2 as a gate dielectric.

a Transfer characteristics under PBS (VG,bias = 10 V, VD,bias = 0 V). b Transfer characteristics under NBS (VG,bias = −1 V, VD,bias = 0 V). The bias-stress time varied between 0 and 43,200 s. c Time dependence of △VTH as a function of stress time under PBS and NBS conditions. Error bars represent the standard deviation from 10 devices.

Back to article page