Fig. 6: Temperature-dependent characteristics of In2O3/ZnO heterojunction TFTs with Hyb_2 as a gate dielectric. | Nature Communications

Fig. 6: Temperature-dependent characteristics of In2O3/ZnO heterojunction TFTs with Hyb_2 as a gate dielectric.

From: Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors

Fig. 6: Temperature-dependent characteristics of In2O3/ZnO heterojunction TFTs with Hyb_2 as a gate dielectric.

Temperature-dependent transfer curve a for the measurement temperature increased from 100 to 300 K in steps of 50 K and b for comparison of transfer curves at room temperature before and after the temperature-dependent measurement. c Arrhenius plots of the electron mobility, on current, and threshold voltage. Error bars represent the standard deviation from 10 devices.

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