Fig. 2: Device characteristics and mechanism of AFeFET neurons.
From: Compact artificial neuron based on anti-ferroelectric transistor
a Planer structure of AFeFET device. b The cross-sectional image of AFeFET device. c The elemental mapping of the materials in the system for Hf, Zr, Ti, N, and W, respectively. d The line scan EDS of the device cross-section, which corresponds to the red arrow in (b). e The HRTEM image of the AFE films. f The crystal structure of the domain, which corresponds to the white square area in (e). g The FFT image of the crystalline domain in (f). The measured angles and distances between relative crystal faces, and diffraction spots suggest the existence of [0-10] oriented tetragonal P42/nmc structure. h The integrate-and-fire dynamics of AFeFET neuron. At stage 1, the electric field-induced FE domain nucleates, and the electrons begin to accumulate in the channel of AFeFET. With the further gate pulse applied (stage 2), the electric field-induced FE domains grow and expand, resulting in more attracted electrons accumulate in the channel of AFeFET. At stage 3, the electric field-induced FE domains transform back into the AFE domains when the gate pulse electric field is removed. The channel AFeFET switches off, and the neuron backs to resting potential. i The tendencies of Id under continuous gate pulses with different amplitudes (1.3–1.8 V amplitude, fixed 100-μs interval, fixed 100 μs width).
