Table 1 Comparison of various hardware implementations of spiking neurons

Mechanism	Variation^#	Structure	Endurance	Energy/spike	Hardware	Self-reset	Driven capability
Redox	9.63%–31.4%^{10,48,49,50,51}	SiO_xN_y:Ag¹⁰	>10⁶	>60 pJ^*	1 C + 1 T + 1ED	√	x
		Ag/SiO₂¹¹	>10⁸	~500 nJ^*	1 C + 2 T + 1ED	√	x
		Ag/HfO₂¹³	——	18 pJ	1 C + 1 T + 1ED	√	x
Mott	6.31%–11.9%^17,52,53,54	NbO₂¹³	——	~52 pJ	1 C + 1 T + 1ED	√	x
		NbO_x¹⁴	>10¹²	~3 pJ^*	1 T + 1ED	√	x
		GaTa₄Se₈¹⁸	——	~10 uJ^*	1 T + 1ED	√	x
Phase-change	6.82%–12.5%^20,55	GST²⁰	3 × 10⁹	>50 pJ	19 T + 1ED	x	√
Phase-change	6.82%–12.5%^20,55	GST²²	——	10 pJ^*	>1 C + 7 T + 1ED	x	√
Magnetic	3%–10%^56,57,58	MTJ²³	——	~7 fJ (simulation)	>4 T + 2ED	x	√
Magnetic	3%–10%^56,57,58	STT-MRAM²⁴	——	——	>21 T + 1ED	x	√
Ferroelectric	1%– 4.03%^32,59,60	FeFET³⁰	——	~360 pJ (simulation)	3 C + 9 T + 1ED	x	√
		FeFET²⁹	——	1–10 pJ	1 C + 6 T + 1ED	x	√
		Leaky-FeFET³²	——	~420 pJ^*	2 T + 1ED	√	x
Anti-ferroelectric	<3.93%^**	AFeFET	>10¹²	37 fJ	8 T + 1ED	√	√

^#The variation results are rarely reported in literature. In this table, the variation data are obtained from devices with the same mechanism category.
*The energy consumption per spike is calculated approximately from the I–t and V–t curves in these reference papers, respectively.
**With further optimizing the stimuli pulse parameters.
√ has this property.
x has no such property.
To unify the benchmark of hardware overhead, all the circuit components in these reference papers are equivalent to three categories: capacitor (C), emerging device (ED) and transistor (T). In chip manufacturing, the area of a resistor is equivalent to that of a transistor. 1 latch is composed of four transistors. 1 XOR gate is composed of ten transistors. An integrated operational amplifier usually consists of more than 20 transistors.

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