Fig. 4: In-situ observations of the pattern formation processes and film/device characterizations.

a, b Selected frames in movies taken from in-situ observation, where (a) shows a fast wave-generation and (b) is pattern evolution process which shows that a line-end dislocation has sequentially passed through two neighbor lines on the right. c Normalized brightness-contrast between neighbored peak and valley measured at various times during wave formation. d Similar measurement as in (c) on two lines with separation 3λ (indicated with A, B) in order to find phase delay time δt. The inset illustrates the wave propagation scenario during the wave generation. e, f Output and transfer curves taken from a FET device made with C8-BTBT + PS wires, where absolute value of the drain current was used for log-plot of the transfer curve. Inset is an image of a device with C8-BTBT + PS wires. g The cross-sectional TEM image of a sample of C8-BTBT + PS wires (top panel) and the EDX analysis of sulfur element (bottom panel). The interface between the C8-BTBT and PS layers is indicated with blue arrows. h X-ray diffraction spectra taken from patterned C8-BTBT + PS line structure before annealing (black curve) and spin-coated C8-BTBT + PS film before (red curve) and after (yellow curve) thermal annealing.