Fig. 5: Temperature-dependent strain response.
From: Strain control of hybridization between dark and localized excitons in a 2D semiconductor
PL spectra vs. strain maps acquired at (a) T = 10 K, b 100 K, c 300 K. An individual spectrum at 10 K measured under 0.25% strain (−140 V) and marked with a white, solid line is shown in the inset of (a). While the energy of the unstrained, free excitonic states (\({X}^{0},\ {X}^{+},\ {X}_{d}^{0}\), the corresponding spectral lines are marked with dashed lines) blueshifts with lowering temperature, the features D1 and D2 associated with the corresponding defects stay roughly energy-independent. Due to the temperature-related changes in mechanical constants, only the D1 state is resolved at 10 K within our accessible VG range. In contrast, we resolve the hybridization with both states D1 and D2 at 100 and 300 K. As opposed to the T = 10 K data in (a) that is symmetric with respect to p- and n- doping, the intensity of the n-branch at 300 K in (c) is roughly 30 times lower than that for the p-branch. Note that the voltage scales in (a–c) are not linear.
