Fig. 2: In situ RHEED patterns of the epitaxial growth of SnO2:NiO on c-plane sapphire along [120]sapphire at 750 °C. | Nature Communications

Fig. 2: In situ RHEED patterns of the epitaxial growth of SnO2:NiO on c-plane sapphire along [120]sapphire at 750 °C.

From: Bicontinuous oxide heteroepitaxy with enhanced photoconductivity

Fig. 2

a Initial state of c-plane sapphire. a-1 The corresponding diffraction pattern of sapphire and schematics. b–e After 75, 125, 175, 225 pulses of deposition. b1–e1 The corresponding diffraction patterns of NiO (green), SnO2:NiO (orange), and schematics.

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