Fig. 1: Structural characterization of InSe and InSe:Y.
From: Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor
a Schematics of InSe single layer and the atomic arrangement of γ-InSe, demonstrating the IP polarization along the AC direction and the OOP polarization along the thickness-direction (see arrows in the middle panel). b SEM images of InSe and InSe:Y. c XRD patterns of single crystalline InSe and InSe:Y. HRTEM images and the corresponding SAED patterns (inset) of InSe (d) and InSe:Y (e) projected along the [010] zone axis.
