Fig. 2: Phonon-limited transport and residual disorder at zero magnetic field.
From: Phonon-mediated room-temperature quantum Hall transport in graphene
a RT carrier mobility (calculated according to the Drude model) as a function of the carrier concentration, for three hBN-encapsulated devices. The reference dash-dotted line are data from ref. 5, indicating a carrier mobility limited by electron-acoustic phonon scattering. The grey-shaded area shows the typical mobility for SiO2-supported graphene devices, 1–2 × 104 cm2V–1s–1. b Inverse of the high-temperature (220 K) field-effect mobility as a function of charge inhomogeneity n*, for hBN/graphene/hBN devices D1-4. The shaded area covers a linear fit to the data, as in ref. 33, ± one standard error on the best-fit intercept and slope. Inset: Log-Log plot of the longitudinal conductivity of sample D1 as a function of the carrier density, exemplifying the extraction of n* (black arrow).
