Fig. 3: Rectified Hall voltage response driven by ac, nonlinear Hall voltage response driven by dc, and nonlinear Hall angle of BaMnSb2.
From: Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material
a The second-harmonic Hall voltage \({V}_{a-{bb}}^{2{{\upomega }}}\), rectified Hall voltage \({V}_{a-{bb}}^{{{{{{\rm{RDC}}}}}}}\), and dc-driven nonlinear Hall voltage \({V}_{a-{bb}}^{{{{{{\rm{DC}}}}}}}\) of C2 at 400 K. b \({V}_{a-{bb}}^{{{{{{\rm{DC}}}}}}}\) at various temperatures for C2. c \({V}_{{{{{{\rm{\perp }}}}}}}^{{{{{{\rm{DC}}}}}}}\) - \({I}^{{{{{{\rm{DC}}}}}}}\) characteristics at 400 K for C2. \({V}_{a-{bb}}^{{{{{{\rm{DC}}}}}}}\) and \({V}_{b-{aa}}^{{{{{{\rm{DC}}}}}}}\) refer to \({V}_{{{{{{\rm{\perp }}}}}}}^{{{{{{\rm{DC}}}}}}}\)measured with the dc \({I}^{{{{{{\rm{DC}}}}}}}\) applied along the b- and a-axis, respectively. d The second-harmonic Hall voltage \({V}_{a-{bb}}^{2{{\upomega }}}\), rectified Hall voltage \({V}_{a-{bb}}^{{{{{{\rm{RDC}}}}}}}\), and dc-driven nonlinear Hall voltage \({V}_{a-{bb}}^{{{{{{\rm{DC}}}}}}}\) of C3 at 300 K. Inset to d: optical image of the crystal used for fabricating C3. e \({V}_{a-{bb}}^{{{{{{\rm{DC}}}}}}}\) at various temperatures for C3. Inset to e: the SEM image of C3. f The second-harmonic voltage \({V}^{2{{{\upomega }}}}\) vs. the input ac current \({I}^{{{\upomega }}}\) characteristics of HB1 at 240 K, measured on three different pairs of voltage leads labeled in the inset. Inset to f: the SEM image of HB1. Open circles and solid lines in a–f represent the experiment data and the quadratic fitting, respectively.
