Fig. 4: Ultrahigh performance of transferred-Pt OTFTs.
From: Ultralow contact resistance in organic transistors via orbital hybridization
a ID~VGS characteristics of typical transferred-Pt monolayer C10-DNTT OFET with channel length/width of 0.65/10 μm under VDS = −3.0 V. Inset shows the AFM image of the device. Scale bar: 5 μm. b ID~VDS characteristics of the device in a. From top to bottom, VGS = −3.0 V, −2.0 V, −1.0 V, and 0 V, respectively. c The on-state saturation current as a function of channel length for various OFETs made by the state-of-the-art contact technology. The symbols in c represent C6-DNTT (open circle), Ph-BTBT-C10 (open star), C8-DNBDT-NW (open left triangle), C9-DNBDT-NW (open down triangle), Dph-DNTT (open up triangle), Tips-pentacene (solid right triangle) and C12-BTBT (solid left triangle), respectively. References in c see Supplementary Table 3. d The a.c.- d.c. rectifying circuit (up) and optical microscope (down) of a typical diode-connected OTFT with channel length/width of 0.7/180 μm, gate-to-source overlap of 1.1 μm, and gate-to-drain overlap of 1.2 μm. e The input a.c. carrier signal and output d.c. voltage as the frequency of 70 MHz. The amplitude of the input sinusoidal-wave voltage of 2.5 V and the load capacitor of 82 nF. f The output d.c. voltage as a function of frequency.
