Fig. 4: Basic NEM-NVM performance and robustness of mechanical bits.
From: Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory
a Current–voltage (I–V) characteristics during cyclic measurements. b Stable retention behavior for a time of 106 s at room temperature. c Electrical conductivity of nano-patterned tungsten before and after exposure to various total radiation doses (1, 3, and 5 Mrad). d Gamma-radiation stability (1 Mrad) of the mechanical bits. The black circle represents LCRS and HCRS before exposure to gamma-radiation, and the red triangle represents LCRS and HCRS of the same devices after 1 Mrad irradiation (100 devices). e, f Mechanical shock (2900 G) and vibration (2000 Hz) stability of the mechanical bits, respectively. Equally, the LCRS and HCRS were evaluated before and after the mechanical shock and vibration experiments (100 devices).
