Table 1 Comparison of NEM-NVM devices
From: Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory
Reference | This work | ||||
|---|---|---|---|---|---|
Electrode configuration | In-plane | In-plane | In-plane | Out-of-plane | Out-of-plane |
Operating mechanisms | Electrostatic program & erase | Electrostatic program & erase | Electrostatic program & erase | Electrostatic program & erase | Electrostatic program Electrothermal erase |
Footprint | \(\sim\) 6.5 \({{{{{\rm{\mu }}}}}}\)m \(\times\) 0.4 \({{{{{\rm{\mu }}}}}}\)m | Single wall CNT | \(\sim\) 10 \({{{{{\rm{\mu }}}}}}\)m \(\times\) 5 \({{{{{\rm{\mu }}}}}}\)m | \(\sim\) 8 \({{{{{\rm{\mu }}}}}}\)m \(\times\) 1.5 \({{{{{\rm{\mu }}}}}}\)m | 2.2 \({{{{{\rm{\mu }}}}}}\)m \(\times\) 0.9 \({{{{{\rm{\mu }}}}}}\)m |
Actuation air gap | 230 nm | <5 nm | 120 nm | 500 nm | 20 nm |
Fabrication method | BEOL CMOS manufacturing processes (65 nm node) | Electroburning method & electron beam lithography | Electron beam lithography | Electron beam lithography | KrF scanner (300 nm node) |
Structural material | Cu, TiN, TaN | CNT | Si, Ti | Cr, Al, Au | W |
Programming voltage | 9.75 V | 1.7 V | >7 V | 16 V | >8.6 V |
Programming energy | >80 \({{{{{{\rm{fJ\; bit}}}}}}}^{-1}\) (simulated) | 0.41 \({{{{{{\rm{aJ\; bit}}}}}}}^{-1}\) | 2.83 \({{{{{{\rm{fJ\; bit}}}}}}}^{-1}\) | ||
Programming time | >400 ns (simulated) | 511 ns (simulated) | 130 ns | 110 ns | |
Erase voltage | 21 V | >8 V | 16 V | 0.9 V | |
Retention | 40 h | >6 months | 41,000 s | >106 s | |
Endurance | >3 cycles | 10 cycles | 42 cycles | 500 cycles | 23 cycles |
Robustness in harsh environments | High temperature (473 K) | Radiation (1 Mrad), shock (2900 G), vibration (2000 Hz), high temperature (400 K) |
