Fig. 3: Morphological studies of C8-NDI and p-NDI films. | Nature Communications

Fig. 3: Morphological studies of C8-NDI and p-NDI films.

From: Wearable in-sensor reservoir computing using optoelectronic polymers with through-space charge-transport characteristics for multi-task learning

Fig. 3

Atomic Force Microscopy (AFM) characterizations of a C8-NDI and b p-NDI films. Scanning Electron Microscopy (SEM) characterization of c C8-NDI and d p-NDI films. e 2D grazing-incidence X-ray diffraction (GIXD) of p-NDI films, with the out-of-plane diffraction peaks shown in f, and in-plane diffraction peaks shown in g. h The device architecture of p-NDI phototransistor. i The enlarged view of d. j The molecular packing, ordering, and orientation of p-NDI domains revealed by GIXD characterization. k The proposed charge generation and recombination diagram, and the relationship between energy bands and voltages applied on the gate and drain electrodes. l The in-plane disordering induced exciton dissociations at the interfaces of polymers in the p-NDI film.

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