Fig. 3: Distribution of transport properties and charge noise.
From: Reducing charge noise in quantum dots by using thin silicon quantum wells
a, b Distributions of mobility μ measured at n = 6 × 1011 cm−2 and percolation density np for heterostructure A (red, 20 H-FETs measured, of which 16 reported in ref. 32), B (blue, 16 H-FETs measured of which 14 reported in ref. 32), and C (green, 22 H-FETs measured). c–e Distributions of noise spectrum power law exponent α, coefficient β indicating the change in noise spectrum with increasing VP, and minimum charge noise \({S}_{\epsilon,min}^{1/2}\) within the range of VP investigated for heterostructure A (red, 4 devices measured), B (blue, 7 devices measured), and C (green, 5 devices measured). Quartile box plots, mode (horizontal line), means (diamonds), 99% confidence intervals of the mean (dashed whiskers), and outliers (circles) are shown.
