Fig. 6: Structural and electrical transport characterization of NdNiO3 and Nd4Ni3O10 reductions on LaAlO3 (001).
From: Limits to the strain engineering of layered square-planar nickelate thin films
a XRD scans of a 15.5 nm NdNiO3 film as-synthesized (bottom) and reduced for 3 hours at 290 °C (top). The vertical dashed lines denote the 200 and 002 peak positions of bulk NdNiO231. b Schematic crystal structures illustrating the formation of a mixture of a- and c-axis oriented NdNiO2 upon reduction of NdNiO3. c XRD scans of a 20.0 nm Nd4Ni3O10 film as-synthesized (bottom) and Nd4Ni3O8 reduced for 3 hours at 290 °C (top). The vertical solid and dashed lines denote 00l peak positions of bulk Nd4Ni3O1095 and Nd4Ni3O820, respectively. The primed indices distinguish the reduced layered square-planar phase from the as-synthesized Ruddlesden–Popper20. d Schematic crystal structures illustrating the reduction of c-axis oriented Nd4Ni3O10 to c-axis oriented Nd4Ni3O8. e Resistivity measurements of the Nd4Ni3O10 and Nd4Ni3O8 films in (c).
