Fig. 4: Typical magneto-drag data for the monolayer/monolayer graphene (MLG/MLG) and monolayer/bilayer graphene (MLG/BLG) devices. | Nature Communications

Fig. 4: Typical magneto-drag data for the monolayer/monolayer graphene (MLG/MLG) and monolayer/bilayer graphene (MLG/BLG) devices.

From: Signature of quantum interference effect in inter-layer Coulomb drag in graphene-based electronic double-layer systems

Fig. 4: Typical magneto-drag data for the monolayer/monolayer graphene (MLG/MLG) and monolayer/bilayer graphene (MLG/BLG) devices.The alternative text for this image may have been generated using AI.

a Schematic of the MLG/MLG device and b the measured Rdrag vs. (nT, nB) mapping. The insulating spacing of this device is ~11.7 nm. c, d Rdrag vs. B curves for points indicated in (b). e Schematic of the MLG/BLG device and f the measured Rdrag vs. (nT, nB) mapping. The insulating spacing is ~12 nm. g, h Rdrag vs. B curves for points indicated in (f). All these measurements are conducted at T = 200 K.

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