Fig. 2: Dielectric properties of transferred oxide films.
From: Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration
a Schematic of metal-insulator-metal (MIM) device structure for capacitance measurement. b The leakage current density as a function of applied voltage for transferred Al2O3 with various thickness. Low leakage current of 10−6 A/cm2 are observed before dielectric breakdown. c Breakdown voltage of the transferred dielectric, where high breakdown electric field over 6 MV/cm are demonstrated. d, e Capacitance-voltage (C–V) characteristic of transferred Al2O3 with various thickness at 1 MHz measurement frequency (d), and its corresponding dielectric constant. f Capacitance-voltage (C–V) characteristic transferred HfO2 (1 MHz frequency) with various thickness, demonstrating highest capacitance of 2.5 μF/cm2. The error bars from c, e are extracted from three devices.
