Fig. 3: Electrical characterization of MoS2 transistors with transferred dielectrics.
From: Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration
a The Ids–Vg transfer characteristic of 100 back-gate MoS2 transistors with both transferred Al2O3 (red lines) or direct ALD Al2O3 (blue lines) with the representative MoS2 transfer cruve highlighted. b, c The statistic distribution of on/off ratio (b) and threshold voltage shift (c) of back-gate MoS2 FETs with transferred Al2O3 and direct ALD Al2O3, respectively, where the solid line is fitted through Gaussian fitting. The devices with transferred dielectric exhibt higher on-off ratio, minimized doping effect. d Optical image of top-gate MoS2 transistor array fabricated by transferred Al2O3 dielectric. Scale bar is 200 µm and 50 µm (inset). e The double-sweep transfer characteristic of a top-gate MoS2 FET fabricated by transferred Al2O3 as the top-gate dielectric, demonstrating small hysteresis value of 10 mV (inset). f The normalized hysteresis (Norm. ΔVH) as a function of sweeping speed, and as a function of source-drain current (inset). The Norm. ΔVH is calculated by using ΔVH/Eg, where ΔVH is the hysteresis and Eg is the gate electric field. The error bars from f are extracted from three devices.
