Table 1 Summary of the photo-physical parameters of the investigated TADF emitters in doped film states

	λ_em	Φ_PL^a	Φ_PF^b	Φ_DF^b	τ_PF^c	τ_DF^c	k_r^{S d}	k_ISC^e	k_RISC^f	ΔE_ST^g
	nm	%	%	%	ns	μs	10⁷ s⁻¹	10⁷ s⁻¹	10⁶ s⁻¹	meV
TBP-3MCz	512	80	20.69	59.31	25.82	1.31	0.80	3.07	2.76	32.29
TBP-DMAc	539	89	40.88	48.12	23.66	3.85	1.73	2.50	0.52	/
TBP-3aDMAc	501	67	31.42	35.58	14.39	44.50	2.20	4.75	0.0372	/
TRZ-3MCz	495	89	26.53	61.47	20.02	1.63	1.33	3.67	1.94	24.58
TB-3MCz	478	83	27.63	55.37	17.20	1.94	1.61	4.21	1.43	22.16

^aPLQY in N₂ condition.
^bFraction quantum yield of prompt fluorescence (Φ_PF) and delayed fluorescence (Φ_DF).
^cPrompt fluorescence lifetime (τ_PF) and delayed fluorescence lifetime (τ_DF) from exponential decay fitting.
^dRate constant of radiative transition.
^eRate constant of ISC, assuming negligible nonradiative transition of singlet state.
^fRate constant of RISC, calculated according to Supplementary Methods.
^gΔE_ST obtained from Arrhenius fitting of temperature-dependence k_RISC.

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