Fig. 4: Photovoltaic effect.
From: Bimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction
a Current density \({J}\) vs \({V}_{{read}}\) measured in dark and under illumination with visible light (\(\lambda=405\,{{{{{\rm{nm}}}}}}\)), using an optical power of \(P=150\,{{{{{\rm{mW}}}}}}.{{{{{\rm{c}}}}}}{{{{{{\rm{m}}}}}}}^{-2}\) at \(T=4\,{{{{{\rm{K}}}}}}\) for a junction previously set in the OFF state. The illumination is halted at the point indicated by the arrow. The open circuit voltage \({V}_{{oc}}\) and short circuit current \({J}_{{sc}}\) are highlighted. b Open circuit voltage \({V}_{{oc}}\) measured across the junction as a function of the remnant zero-bias conductance \({G}_{0}\) at \(T=4\,{{{{{\rm{K}}}}}}\) as the junction is switched from the ON to the OFF state (solid symbols.) and the OFF to the ON state (hollow symbols) by application of \({V}_{{write}}\). The inset shows the corresponding \({G}_{0}\) as a function of \({V}_{{write}}\).
