Fig. 2: SiO2-based selector, memristor and 1S1R device. | Nature Communications

Fig. 2: SiO2-based selector, memristor and 1S1R device.

From: Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications

Fig. 2

a I–V characteristics of the CuAg/SiO2(90 nm)/CuAg selector as determined by Keithley 6430. b I–V characteristics of the Pt/SiO2/TiN memristor in DC voltage sweep cycles with different stop voltages, the Pt/SiO2/TiN memristor exhibits typical SET and RESET processes. c I–V characteristics of the 1S1R device in DC voltage sweep cycles with different stop voltages. d Cross-sectional STEM image of one 1S1R device. e The EDS mapping and linear sweep results with the elements Ag, Cu, Ti, N, Pt, Si and O corresponding to (d).

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