Table 1 Summary of measured Q-factor in the grating, photonic crystal slab, and metasurface
From: Ultrahigh-Q guided mode resonances in an All-dielectric metasurface
Mechanism | Q | λ(nm) | θinc(°) | Structure | Substrate | Etching (Y/N) | Sample size (µm2) | Ref |
|---|---|---|---|---|---|---|---|---|
SLR | 2340 | 1550 | 0 | Au NPs Array | Silica glass | N | 600 × 600 | |
EIT | 483 | 1371 | 0 | Si metasurface | Quartz | Y | 225 × 225 | |
GMR (TE) | 8000 | 750 | 0 | SiO2 grating On Si3N4 | Glass | Y | 10,000 × 15,000 | |
GMR (TM) | 4500 | 805 | 0 | |||||
GMR | 2700 | 1304 | 0 | Shallow Si grating | SiO2 | Y | 5000 × 5000 | |
GMR | 391 | 860 | 0 | Resist grating on HfO2 | Fused-Silica | N | – | |
GMR | 306 | 1531 | 45 | SiO2 grating | SOI | Y | 5000 × 7000 | |
GMR | 32,000 | 490 | 0.2 | Si3N4 PCS | 6 µm SiO2 on Silicon | Y | > 10,000 × 10,000 | |
GMR | 2500 | 1465 | 0 | Si metagrating | Sapphire | Y | 300 × 300 | |
SP-BIC | 1946 | 1425 | 0 | Si metasurface | SOI | Y | 410 × 410 | |
SP-BIC | 10,000 | 583 | 0.1 | Si3N4 PCS | SiO2 | Y | 17,300 × 17,300 | |
SP-BIC | 2750 | 825 | 4 | GaAs metasurface | SiO2 | Y | 60 × 108 | |
BIC | 18,511 | 1588.4 | 0 | Si metasurface | SiO2 | Y | 19 × 19 | |
Resonance trapped-BIC | 4700 | 1551.4 | 0 | InGaAsP metasurface | No Substrate | Y | 19 × 19 | |
Topological BIC | 490,000 | 1568.3 | 1.2 | Si PCS | No Substrate | Y | 250 × 250 | |
Topological BIC | 7250 | 1595 | - | InGaAsP PCS | No Substrate | Y | 16 × 16 | |
GMR | 239,000 | 1551 | 0 | Resist PCS | 220 nm SOI | N | 520 × 520 | This work |
