Fig. 3: Molecular dynamic simulations of epitaxial c-Si and twin-Si growth. | Nature Communications

Fig. 3: Molecular dynamic simulations of epitaxial c-Si and twin-Si growth.

From: Prediction of sub-pyramid texturing as the next step towards high efficiency silicon heterojunction solar cells

Fig. 3

a, b The densities of new generated epitaxial c-Si (a) and twin-Si (b) on pure (111) c-Si plane, hybrid (111)0.9/(011)0.1 plane, and hybrid (111)0.8/(011)0.2 plane, as a function of time at 500 K. The slopes of fitting curves represent the generating rates. c, d In the simulations of amorphous Si deposition, the densities of epitaxial c-Si (c) and twin-Si growth (d) on pure (111) c-Si plane, hybrid (111)0.9/(100)0.1 plane, hybrid (111)0.9/(011)0.1 plane, and hybrid (111)0.8/(011)0.2 plane, as a function of time.

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