Fig. 4: Interfacial morphology of molecular dynamic simulations in a-Si deposition process. | Nature Communications

Fig. 4: Interfacial morphology of molecular dynamic simulations in a-Si deposition process.

From: Prediction of sub-pyramid texturing as the next step towards high efficiency silicon heterojunction solar cells

Fig. 4: Interfacial morphology of molecular dynamic simulations in a-Si deposition process.The alternative text for this image may have been generated using AI.

a–c Schematic diagram of textured pyramid with apex angle θ > 70.53° (a), θ = 70.53° (b) and θ < 70.53°(c). d–f the top view of the c-Si/a-Si interface for the hybrid (111)0.9/(100)0.1 plane (d), pure (111) plane (e), and hybrid (111)0.9/(011)0.1 plane (f), following a-Si deposition simulations, while in order to present the distribution of epitaxial c-Si and nanotwins, all a-Si atoms are hidden; the green and red rectangle represents the minor plane in hybrid c-Si interface, (100) facet and (011) facet, respectively; the white dashed line represents the side view position. g, h The side view of c-Si/a-Si interface of hybrid (111)0.9/(100)0.1 plane (g) and hybrid (111)0.9(011)0.1 plane (h) along with time t = 0 ns (top panel), t = 10 ns (middle panel), as well as t = 50 ns (bottom panel). The black dash line represents (111) c-Si facet, the green rectangle and dash line represent the (100) c-Si facet, the red rectangle and dash line represent the (011) c-Si facet. i–l The epitaxial c-Si (i, k) and twin-Si (j, l) of (111) component (black curves), (100) component (green curves), and (011) component (red curves) as a function of time, on hybrid (111)0.9/(100)0.1 plane (i, j) and hybrid (111)0.9/(011)0.1 plane (k, l).

Back to article page