Fig. 5: Magnetic properties and SOT characterizations of sputtered Co-wedged samples on Si/SiO2 substrates.

a, b The Hall resistance RH vs. perpendicular field Hp (a) and in-plane field Hin (b) at different Co thickness of 0.159 nm, 0.209 nm, 0.260 nm, 0.294 nm, 0.344 nm, and 0.395 nm in Co-wedged Si/SiO2/[Pt(1)/Co(tCo)]5/Mg(2) film stacks. c Anti-damping torque efficiencies of conventional spin polarizations (θAD,y) and of unconventional spin polarizations (θAD,x and θAD,z) at different Co thickness measured in Co-wedged Si/SiO2/[Pt(1)/Co(tCo)]5/Mg(2)/CoFeB(2.5) film stacks. The error bars represent the parameters fitted with 95% confidence interval.