Fig. 1: X-ray diffraction, schematic of ST-FMR set-up and origin of spin polarizations.
From: Generation of out-of-plane polarized spin current by spin swapping
a Structure of Mn3Sn viewed along the [0001] direction. Pink and gray balls represent Mn and Sn atoms, respectively. b X-ray diffraction pattern of Ru/Mn3Sn (0001)/Py structures grown on Al2O3 (0001) substrates. Mn3Sn layer thicknesses are 3 nm (black) and 12 nm (green). c Phi (ϕ) scan across the Al2O3 \(\left\{10\bar{1}4\right\}\), Ru \(\left\{10\bar{1}2\right\}\) and Mn3Sn \(\left\{20\bar{2}1\right\}\) reflections for the Ru/Mn3Sn (0001)/Py structures with 12 nm Mn3Sn film. d Schematic of the ST-FMR experimental set-up and Mn3Sn/Py device. The directions of IRF, Hext and angle (φ) between IRF and Hext are also shown. e The direction and origin of \({p}_{{{{{{\rm{y}}}}}}}\) and \({p}_{{{{{{\rm{z}}}}}}}\) for the Mn3Sn/Py structure are shown schematically. The upper panel shows that \({p}_{{{{{{\rm{y}}}}}}}\) originates from the SHE, which is related to the AFM structure of Mn3Sn. \({p}_{{{{{{\rm{z}}}}}}}\) arises when the spin-polarized current from Py is scattered at the interface due to the spin swapping effect (lower panel). Note that \({{{{{{\bf{p}}}}}}}_{{{{{{\rm{i}}}}}}}={p}_{{{{{{\rm{i}}}}}}}\hat{{{{{{\boldsymbol{i}}}}}}}\) (i = y or z). The interfacial spin-orbit field (ISOF) is also shown schematically.
