Fig. 4: Lattice symmetry and band structure tuned by moiré potential in top hBN/graphene/bottom hBN heterostructure.
From: Controlled alignment of supermoiré lattice in double-aligned graphene heterostructures
a Art view of the supermoiré lattice with twist angles (θt and θb) between graphene and T-hBN and B-hBN. b Schematics of the top-gate device with double moiré. Longitudinal resistance (Left axis) and Hall resistance (right axis) with B = 0.5 T versus carrier density for (c), C1 (0°/0°), (d), C2 (0°/30°), and (e), C3 (30°/30°). The insets show the corresponding band structures at the K-point. CNP refers to the charge neutrality point of Dirac band. Landau fan diagram of (f), C1, (g), C2 and (h), C3 plotted in magnetic field (left) and corresponding \(\phi /{\phi }_{0}\) versus \(n/{n}_{0}\). \(\phi /{\phi }_{0}\) and \(n/{n}_{0}\) are the normalized magnetic flux and carrier density, respectively. The top number are the topological index ν to be ±2, ±6, ±10, etc. \(T=\,2\,{{{{{\rm{K}}}}}}\).
