Fig. 2: Robust avalanche breakdown and the relevant carrier dynamics.
From: An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
a Temperature-dependent reverse I–V characteristics of the HJD. b Photograph of the UIS test setup and its circuit diagram. c Typical temperature-dependent UIS voltage and current waveforms for the Ga2O3 HJD at a LUIS of 1 mH. d Temperature coefficient values (1.0 V/°C) for BV extracted from quasi-static and UIS measurements, respectively. e IAVA and avalanche energy (EAVA) as a function of LUIS. f Illustration of the carrier transport dynamics under the avalanche condition. g Simulated contour of the impact ionization (I. I.) generation rate at BVAVA. h, i Simulated profiles of the electron and hole concentration, E-field, and I. I. generation rate in the HJD under two different hole mobilities, at an IAVA of 30 A.
