Fig. 1: The selective ALD processes. | Nature Communications

Fig. 1: The selective ALD processes.

From: Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition

Fig. 1: The selective ALD processes.

a The scheme of redox-coupled ABC-type ALD. b The TaOx film thickness as a function of ALD cycles, the line curves are fitting data through the nucleation model, and the insets show the AFM images and the root-mean-square (RMS) roughness of the films corresponding to 50, 100, and 150 ALD cycles. c The proportion of Ta element on Cu and SiO2 during 50,100, and 200 ALD cycles, respectively, the inset shows the corresponding high-resolution XPS scan of Ta 4 f. d Film thickness versus different AB-type and ABC-type ALD processes between Cu and SiO2. Each data point of the film thickness is measured at two positions of one sample by spectroscopic ellipsometry. Error bars represent standard deviations after two measurements of each sample. e The cross-sectional bright-field and dark-field TEM images, and element scans of Ta and Si of the TaOx thin film, the insetting electron diffraction image shows the film is amorphous.

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