Fig. 1: Layer stacking in bulk MoTe2 and initial characterization.
From: Emergent layer stacking arrangements in c-axis confined MoTe2
a Schematics of the 1T′ and Td phases of MoTe2 in the ac-plane. We use universal coordinates, where the layer-sliding direction is along the a-axis for both 1T′ and Td. The overlaid arrows represent the in-plane displacement component of the Te-Te pairs that bridge the vdW gap, here expressed by the vector λ. The color of the arrows denotes the displacement direction. b Electrical resistance of MoTe2 of varying thicknesses as a function of temperature, normalized to the resistance at 350 K. Data are offset vertically for clarity (plus 0.3 for 35 nm flake and plus 0.6 for the bulk crystal). Inset shows an optical image of the 8 nm flake. c Raman spectroscopy of MoTe2 flakes as a function of temperature and flake thickness. The spectra show the inter-layer shear mode, which is sensitive to the layer stacking order19. Extended Raman data is shown in Supplementary Fig. 1.
