Fig. 2: Detailed microstructure analysis of the grain lattice and grain boundary in the as-sintered B4C ceramics. | Nature Communications

Fig. 2: Detailed microstructure analysis of the grain lattice and grain boundary in the as-sintered B4C ceramics.

From: Contribution of boundary non-stoichiometry to the lower-temperature plasticity in high-pressure sintered boron carbide

Fig. 2

EELS analysis (a, b, g, h) and spherical aberration corrected TEM analysis (c–f, i–r) of as-sintered a–f LPHT-B4C and g–r HPLT-B4C at various locations from inner grain to grain boundary. a, g Boundary morphology. b, h EELS results of corresponding points in (a, g). The peak change in (h) indicates the boundary non-stoichiometry. c Atomic arrangements of inner grain. d Grain boundary morphology. e, f Atomic arrangements near the grain boundary. No obvious change can be observed in LPHT-B4C. i Local atomic arrangement of inner grain. j Grain boundary morphology. k, l Atomic arrangements along the grain boundary. m–o Carbon deficiency along the boundary corresponding to (k). p–r Boron enrichment near the boundary corresponding to (l), reflecting the bent chains CBC with different orientations of singular chains, linear chain combined with rhombus CB2C and rhombi CB2C, respectively. s Atomic model of perfect B4C. Source data are provided as a Source Data file.

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