Fig. 2: Role of ion species in the radiation tolerance of γ-Ga2O3. | Nature Communications

Fig. 2: Role of ion species in the radiation tolerance of γ-Ga2O3.

From: Universal radiation tolerant semiconductor

Fig. 2

Low magnification HAADF-STEM images of the samples implanted with (a) Au and (f) Ga ions with the fluences corresponding to the 86–88 dpa range. SAED patterns of the γ-layer taken along [100], [110], [111] and [112] directions in the Au implanted sample are shown in the panels (b, c, d, and e) respectively. g High Resolution ADF-TEM image of the Ga implanted sample taken at the amorphous/crystalline interface with corresponding FFTs. h EELS spectra of the oxygen-K edge, acquired from β-, (black line) γ- (red line), and amorphous (blue line) Ga2O3 phases.

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