Table 1 Summary of single-line operations for the device from Fig. 2a at T = 5.85 K and H = 0
From: Word and bit line operation of a 1 × 1 μm2 superconducting vortex-based memory
Operation | Easy | Moderate | Difficult | Hard |
|---|---|---|---|---|
Write 1 (0 → 1) | – | IWL > 0 | IWL < 0 | BL |
Write −1 (0 → − 1) | – | IWL < 0 | IWL > 0 | BL |
Erase 1 (1 → 0) | IWL < 0 | – | IWL > 0 | BL |
Erase −1 (−1 → 0) | IWL > 0 | – | IWL < 0 | BL |
Threshold (mA) | 0.15 | 0.73 | 0.87 | >1 |
