Fig. 1: Large TMR in the FGT/GaSe/FGT MTJ devices.
From: Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions
a Typical optical image of the core structure of the device made of different flakes. Inset shows the schematic diagram of the device and magnetotransport setup. The magnetic field (B) is applied in an out-of-plane direction. b Current density J versus applied bias Vbias for the devices with the GaSe thickness ranging from 5.5 to 15.6 nm (devices A-G) in parallel-magnetic configuration. The inset shows the J–Vbias curves of devices A and B in a larger bias range. c Magnetic hysteresis of the resistance R loop for device D at Vbias = 10 mV, and the corresponding TMR is ~192.4%. Red and blue horizontal arrows show the sweeping directions of B. Black-vertical arrows denote the two FGTs’ magnetization configurations. d The measured maximum TMR ratios in the different devices at 10 mV. The inset shows the plotted zero-bias log(RA) is nearly linear with the number of GaSe layers in both parallel and antiparallel states.
