Fig. 2: The bias-dependent TMR of the devices.
From: Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions

a, b The R–B curves at various positive bias for devices B and D. c I–Vbias curves of devices B, D, and E in parallel and antiparallel states, respectively. d The corresponding TMR as a function of Vbias. The hollow symbols are extracted from the R–B curves. The temperature is fixed at 10 K.