Fig. 3: Voltage-dependent Raman shifts. | Nature Communications

Fig. 3: Voltage-dependent Raman shifts.

From: Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Fig. 3: Voltage-dependent Raman shifts.

a A series of Raman spectra of the FGT/IS heterostructure as a function of VG, measured at 70 K. The measurements are performed as the magnitude of VG is progressively increased (0 V → +6 V, and 0 V → −6 V). After each VG application, Raman measurements are repeated at zero bias (see SI Fig. S9). The four fitted Raman peak positions at zero bias are shown as vertical solid black lines and the peak positions for each voltage application is shown as dotted gray lines. The dashed black line shows a Raman spectrum obtained at 300 K (RT) without any bias. Each plot is vertically spaced from neighboring plots by 300 counts. b A summary of VG-dependent Raman peak positions. The error bars are defined in Methods.

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