Fig. 1: Characteristics of organic semiconductor interlayer enabling optoelectronic memristor.
a–d Chemical structures of the ESIPT-active organic semiconductors and their orbital diagrams in excited states (K* forms) calculated by DFT: a DNH, b DNH-F, c CH-M, and d CH-P. e–h Chemical structures of the non-ESIPT organic semiconductors and their orbital diagrams in excited state calculated by DFT: e DN, f DN-F, g C-M, and h C-P. Theoretically calculated dipole moment values are added. i, j Absorbance of the organic semiconductor thin films casted on quartz: i DNH, DN, DNH-F, and DN-F. j CH-M, C-M, CH-P, and C-P. k Time-resolved photoluminescence of organic semiconductor thin films casted on quartz. l Schematic diagram of optoelectronic memristor. m, n Energy-level diagrams of the memristor representing the induced dipole moment effect of the molecules within the organic thin film: (m) flat band condition and (n) equilibrium. Vb and Eb are built-in potential and electric field. Vd and Ed are enhanced built-in potential and electric field by the dipole effect. Vd and Ed increase to Vdl and Edl at the light (Vdl and Edl are enhanced built-in potential and electric field by the dipole effect at the light). o Mott–Schottky plots of CH-P-integrated memristor (FTO/NiO/organic interlayer/PMMA/Ag) at dark and under R-, G-, and B-light irradiation (450, 525, and 630 nm).
