Fig. 2: OFET proving induced dipole moment generation within organic interlayer under electric field.

a Schematic diagram of OFET. b–f Transfer characteristics of OFETs (IDS vs. VGS) at VDS = −15 V at dark and light-irradiation condition: b without organic dielectric layer, c, d with ESIPT-active organic thin film as gate dielectric (c: DNH-F and d: CH-P), and e, f with non-ESIPT organic thin film as gate dielectric (e: DN-F, and f: C-P).