Fig. 4: Fermi level (EF) as a function of defects density in 3C-SiC. | Nature Communications

Fig. 4: Fermi level (EF) as a function of defects density in 3C-SiC.

From: Engineering the formation of spin-defects from first principles

Fig. 4: Fermi level (EF) as a function of defects density in 3C-SiC.The alternative text for this image may have been generated using AI.

The Fermi level is referred to the top of the valence band. We show results for different temperatures (1000 K a, 1200 K b, and 1400 K c); we consider, separately, initial n-doping of the sample, and specific concentrations of carbon (VC) and silicon (VSi) vacancies, and carbon antisite vacancy complexes (CAV); we also consider two additional cases: (i) same concentration of VC and VSi (VC = VSi); (ii) same concentration of VC and CAV (VC = CAV). The dashed line indicates the value of mid-gap for 3C-SiC; the green-region for EF > 1.46 eV indicates favorable conditions for the formation of the double vacancy in the range of temperatures between 1000 and 1300 K (see text).

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