Table 1 Summary of ovonic threshold-switching device performances after annealing using different materials
From: The role of arsenic in the operation of sulfur-based electrical threshold switches
Material | Feature Size (nm) | Thickness (nm) | Selectivity | Jon (MA/cm2) | Ioff (A) | Vth (V) | Vh (V) | Speed (ns) | Endurance | Thermal stability |
|---|---|---|---|---|---|---|---|---|---|---|
GeSAs20 | 60 | 10 | 105 | 21 | 2.3 × 10−9 | 3.3 | ~1.9 | ~10 | 107 | 450 °C/30 min |
GeSAs25 | 60 | 10 | 104 | 16 | 1.2 × 10−8 | 2.5 | ~1.5 | ~10 | 109 | 450 °C/30 min |
GeSAs43 | 60 | 10 | 104 | 12 | 1.5 × 10−8 | 2 | ~1.4 | ~10 | ~1010 | 450 °C/30 min |
NGeCTe35 | 32 | 15 | 104 | 12 | ~2 × 10−8 | ~1.5 | ~1.2 | — | — | 400 °C/30 min |
AsTeGeSiN30 | 30 | 40 | 103 | 11 | ~ 2 × 10−7 | ~1.5 | — | — | — | 500 °C/15 min |
GeSe32 | 50 | 5 | 103 | — | 10−6 | ~1.4 | ~0.5 | 2 | — | 350 °C/4 min |
TeAsGeSiSe33 | 350 | 20 | 104 | 0.44 | 5 × 10−9 | 3 | — | — | — | 350 °C/30 min |
GeSeSbN34 | 350 | — | 106 | 0.2 | 10−10 | 2.5 | ~1.3 | — | 108 | 400 °C/30 min |
CTe31 | 30 | ~10 | 105 | 11 | 5 × 10−9 | ~0.6 | ~0.3 | <10 | 106 | 450 °C/30 min |
