Fig. 6: Elemental distribution in aged devices and the corresponding schematic diagram of PSC degradation.

a–d ToF-SIMS elemental depth profiles of the aged device with Ag electrode, the aged device with Bi electrode (The thickness of Bi electrode is 200 nm here for the test), the fresh device with Bi electrode and bilayer barrier, the aged device with Bi electrode and bilayer barrier (aging condition: continuous 1 sun equivalent white-light LED illumination, in N2 atmosphere, 85 °C, 100 h). e–g Schematic diagram of the iodine ions migration within the devices with three different architectures.