Fig. 5: 1T1R electrical performance. | Nature Communications

Fig. 5: 1T1R electrical performance.

From: CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

Fig. 5

a DC characteristic of a single HfO2 RRAM over 150 switching cycles. The blue line shows the average switching curve. b DC characteristics of a 1T1R memory cell over ten switching cycles (VGS = 3 V). The magenta line shows the average switching curve. c Cumulative probability plot of VSET and VRESET distribution for the 1T1R memory cell measured over 35 memory cells. The median values of VSET and VRESET are 0.9 V and −1.5 V, respectively.

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