Fig. 3: Defined area for chemical control of defects and proposed mechanism for generation and growth of correlated domains in Hf-UiO-66.
From: Synthetic control of correlated disorder in UiO-66 frameworks
Compositional plots interpolated from Series A, B, and C data at a temperature (T) of 120 °C. The color-z-axis used respects the numerical value of the experimental point used in each case. a Correlation of superlattice diffraction and b Cluster connectivity as a function of the linker to metal (L/M) and modulator to linker (Mod/L) ratios. Samples in the gray area have not been considered for analysis. Open circle and cross symbols correspond to the formation of secondary phases and the inability to form a UiO-66-like solids, respectively. c Proposed structural description for the different stages in the formation and growth of reo domains starting from defect-free fcu topology and accounting for the variations in superlattice diffraction and cluster connectivity observed for variable L/M ratio.
